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...of The Silicon Age. Physics Today, Dec., 34-39 (1997) (141) W. Shockley, GL Pearson and JR Hayncs. Hole Injection in Germanium - Quantitative Studies...Transistors, Bell Syst. Tech. J., 28, 344-366 (1949) (142) J. Bardeen, Theory of Relation Between Hole Concentrations and Characteristics of Germanium Point... | |
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...Bardeen, Nature of The Forward Current in Germanium Point Contacts, Phys. Rev., 74, 231-232 (1948) [11] W. Shockley, GL Pearson and JR Haynes, Hole Injection...Quantitative Studies and Filamentary Transistors, Bell System Tech. J., 28, 344366 (1949) Transistors, Bell System Tech. J., 28, 435-489 (1949) [13] W. Shockley,... | |
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...was later used for lifetime measurement under specialized conditions. (See 53H1.) 49S2 Shockley, W. , GL Pearson, and JR Haynes HOLE INJECTION IN GERMANIUM—...STUDIES AND FILAMENTARY TRANSISTORS Bell Syst. Tech. J., vol. 28, pp. 344-366, July 1949. ANALYSIS DRIFT FIELD, EMITTER POINT EFFICIENCY The drift of injected... | |
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W. Shockley, GL Pearson, and JR Haynes, "Hole Injection in Germanium — Quantitative Studies and Filamentary Transistors, 