I reasoned that polycrystalline germanium, with its variations in resistivity and its randomly occurring grain boundaries, twins and crystal defects that acted as uncontrolled resistances, electron or hole emitters and traps would affect transistor operation... ULSI Process Integration III: Proceedings of the International Symposium - Էջ 17 Electrochemical Society. Meeting - 2003 - 598 էջ Ամբողջությամբ դիտվող -
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