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" I reasoned that polycrystalline germanium, with its variations in resistivity and its randomly occurring grain boundaries, twins and crystal defects that acted as uncontrolled resistances, electron or hole emitters and traps would affect transistor operation... "
ULSI Process Integration III: Proceedings of the International Symposium - Էջ 17
Electrochemical Society. Meeting - 2003 - 598 էջ
Ամբողջությամբ դիտվող - Այս գրքի մասին

ULSI Science and Technology/1997: Proceedings of the Sixth International ...

Hisham Z. Massoud - 1997 - 686 էջ
...mobility of free carriers, which was indeed found to be the case [46-52]. According to GK Teal [53-56]: "I reasoned that polycrystalline germanium, with its...twins and crystal defects that acted as uncontrolled resistance, electron or hole emitters and traps would affect transistor operation in uncontrolled ways....
Ամբողջությամբ դիտվող - Այս գրքի մասին




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