| Electrochemical Society. Electronics Division, Electrochemical Society. Meeting - 2001 - 482 էջ
...the targeted film thickness). In contrast with any other SOI technology, in the new SON technology, the silicon film and buried insulator, both of nanometric...fine as the resolution of the epi process (less than 1nm). In addition, no more than one (bulk-type) wafer is needed to fabricate the SON layers, in contrast... | |
| Electrochemical Society. Meeting - 2003 - 538 էջ
...down scaling of the Si film and the BOX, but the commercial availability of such thin films as 5-15nm still faces problems of feasibility and dispersions....fine as the resolution of the epi process (less than Iran). In addition, no more than one (bulk-type) wafer is needed to fabricate the SON byers, in contrast... | |
| John D. Cressler - 2018 - 1248 էջ
...problems of feasibility and dispersions. In contrast with any other SOI technology, in the SON process, the silicon film and buried insulator, both of nanometric...fine as the resolution of the epi process (less than 1 nm). In addition, no more than one (bulk-type) wafer is needed to fabricate the SON layers, in contrast... | |
| John D. Cressler - 2018 - 1248 էջ
...downscaling of the Si film and the BOX, but the commercial availability of such thin films as 5-15 nm still faces problems of feasibility and dispersions....with any other SOI technology, in the SON process, the silicon film and buried insulator, both of nanometric scale, are defined by epitaxy on a bulk substrate.... | |
| John D. Cressler - 2017 - 264 էջ
...downscaling of the Si film and the BOX, but the commercial availability of such thin films as 5-15 nm still faces problems of feasibility and dispersions....with any other SOI technology, in the SON process, the silicon film and buried insulator, both of nanometric scale, are defined by epitaxy on a bulk substrate.... | |
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